The 34 references without contexts in paper A. Borzdov V., V. Borzdov M., N. Dorozhkin N., А. Борздов В., В. Борздов М., Н. Дорожкин Н. (2016) “ЧИСЛЕННОЕ МОДЕЛИРОВАНИЕ ЭЛЕКТРИЧЕСКИХ ХАРАКТЕРИСТИК ГЛУБОКОСУБМИКРОННОГО МОП-ТРАНЗИСТОРА СО СТРУКТУРОЙ «КРЕМНИЙ НА ИЗОЛЯТОРЕ» // NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR” / spz:neicon:pimi:y:2016:i:2:p:161-168

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Fischetti M.V., Laux S.E., Crabbe E. Understanding hot-electron transport in semiconductor devices. Journal of Applied Physics, 1995, vol. 78, no. 2, pp. 1058–1087.
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