The 32 references with contexts in paper A. Borzdov V., V. Borzdov M., N. Dorozhkin N., А. Борздов В., В. Борздов М., Н. Дорожкин Н. (2016) “ЧИСЛЕННОЕ МОДЕЛИРОВАНИЕ ЭЛЕКТРИЧЕСКИХ ХАРАКТЕРИСТИК ГЛУБОКОСУБМИКРОННОГО МОП-ТРАНЗИСТОРА СО СТРУКТУРОЙ «КРЕМНИЙ НА ИЗОЛЯТОРЕ» // NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR” / spz:neicon:pimi:y:2016:i:2:p:161-168

1
O. Kononchuk and B. -Y. Nguyen Silicon-on-insulator (SOI) Technology. Manufacture and Applications / eds., Woodhead Publishing, Sawston, Cambridge, UK, 2014, 474 p.
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  1. In-text reference with the coordinate start=6824
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    DOI: 10.21122/2220-9506-2016-7-2-161-168 162 Introduction Silicon-on-insulator (SOI) technology in micro- and nanoelectronics has gained a great interest in the last decades. Deep submicron SOI MOSFETs are regarded as promising elements for modern integrated circuits in different electronic applications
    Exact
    [1, 2]
    Suffix
    . Among the advantages of submicron SOI MOSFETs, in comparison with common «bulk» MOSFETs, are the lower power dissipation and increased operation speed, lower leakage currents, and higher radiation hardness.

2
Sakurai T., Matsuzawa A., Douseki T. Fully-Depleted SOI CMOS Circuits and Technology for UltralowPower Applications, Springer, Dordrecht, The Netherlands, 2006, 411 p.
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  1. In-text reference with the coordinate start=6824
    Prefix
    DOI: 10.21122/2220-9506-2016-7-2-161-168 162 Introduction Silicon-on-insulator (SOI) technology in micro- and nanoelectronics has gained a great interest in the last decades. Deep submicron SOI MOSFETs are regarded as promising elements for modern integrated circuits in different electronic applications
    Exact
    [1, 2]
    Suffix
    . Among the advantages of submicron SOI MOSFETs, in comparison with common «bulk» MOSFETs, are the lower power dissipation and increased operation speed, lower leakage currents, and higher radiation hardness.

3
Celler G.K., Cristoloveanu S. Frontiers of siliconon-insulator. Journal of Applied Physics, 2003, vol. 93, no. 9, pp. 4955–4978.
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  1. In-text reference with the coordinate start=7177
    Prefix
    Among the advantages of submicron SOI MOSFETs, in comparison with common «bulk» MOSFETs, are the lower power dissipation and increased operation speed, lower leakage currents, and higher radiation hardness. Deep submicron SOI MOSFETs are less vulnerable to short-channel effects in comparison with common MOSFETs
    Exact
    [3]
    Suffix
    . Results of recent investigations show that very promising is the use of submicron SOI MOSFETs as different sensors and detectors. For instance, the possibility to use SOI MOSFETs as electric field sensors was proposed in [4].

4
Xin’an C., Qing’an H. A novel SOI MOSFET electrostatic field sensor. Journal of Semiconductors, 2010, vol. 31, no. 4, pp. 045003-1–045003-4.
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  1. In-text reference with the coordinate start=7425
    Prefix
    Results of recent investigations show that very promising is the use of submicron SOI MOSFETs as different sensors and detectors. For instance, the possibility to use SOI MOSFETs as electric field sensors was proposed in
    Exact
    [4]
    Suffix
    . Also recently the possibility to use deep submicron SOI MOSFETs as unique single-photon detectors at room temperature was demonstrated in [5, 6]. Today the development of modern devices of micro- and nanoelectronics, including various sensor devices, can not be done without computer simulation of their characteristics.

5
Du W., Inokawa H., Satoh H., Ono A. SOI metaloxide-semiconductor field-effect transistor photon detector based on single-hole counting. Optics Letters, 2011, vol. 36, no 15, pp. 2800–2802.
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  1. In-text reference with the coordinate start=7577
    Prefix
    For instance, the possibility to use SOI MOSFETs as electric field sensors was proposed in [4]. Also recently the possibility to use deep submicron SOI MOSFETs as unique single-photon detectors at room temperature was demonstrated in
    Exact
    [5, 6]
    Suffix
    . Today the development of modern devices of micro- and nanoelectronics, including various sensor devices, can not be done without computer simulation of their characteristics. Thereupon it must be noted that ensemble Monte Carlo method has been widely used as a powerful tool for simulation of carrier transport phenomena in different semiconductor devices.

6
Du W., Inokawa H., Satoh H., Ono A. Singlephoton detection by a simple silicon-on-insulator metaloxide-semiconductor field-effect Transistor. Japanese Journal of Applied Physics, 2012, vol. 51, pp. 06FE011–06FE01-4.
Total in-text references: 1
  1. In-text reference with the coordinate start=7577
    Prefix
    For instance, the possibility to use SOI MOSFETs as electric field sensors was proposed in [4]. Also recently the possibility to use deep submicron SOI MOSFETs as unique single-photon detectors at room temperature was demonstrated in
    Exact
    [5, 6]
    Suffix
    . Today the development of modern devices of micro- and nanoelectronics, including various sensor devices, can not be done without computer simulation of their characteristics. Thereupon it must be noted that ensemble Monte Carlo method has been widely used as a powerful tool for simulation of carrier transport phenomena in different semiconductor devices.

7
Sampedro C., Gamiz F., Godoy A., JimenezMolinos F. Quantum Ensemble Monte Carlo simulation rate provided by Keldysh model. For VD = 3.5 V the effect of impact ionization on the drift velocity and kinetic energy is sufficient. In this case higher Keldysh generation rate leads to much more intensive energy loss of electrons near the drain end of the channel then for full-band model. At the same time the procedure of definition of electron and hole states after ionization event also makes an influence on particle energy distribution in the channel. 167 of silicon-based nanodevices. Journal of Computational Electronics, 2007, no. 6, pp. 41–44.
Total in-text references: 1
  1. In-text reference with the coordinate start=8096
    Prefix
    Thereupon it must be noted that ensemble Monte Carlo method has been widely used as a powerful tool for simulation of carrier transport phenomena in different semiconductor devices. By means of Monte Carlo simulation static, dynamic and noise characteristics of submicron SOI MOSFETs have been calculated
    Exact
    [7–10]
    Suffix
    . One of the advantages of the method is the possibility of incorporation of rather sophisticated models describing different physical processes into the simulation procedure. Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering.

8
Rengel R., Martin M.J., Gonzalez T., Mateos J., Pardo D., Dambrine G., Raskin J.-P., Danneville F. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs. IEEE Transactions on Electron Devices, 2006, vol. 53, no. 3, pp. 523–532.
Total in-text references: 3
  1. In-text reference with the coordinate start=8096
    Prefix
    Thereupon it must be noted that ensemble Monte Carlo method has been widely used as a powerful tool for simulation of carrier transport phenomena in different semiconductor devices. By means of Monte Carlo simulation static, dynamic and noise characteristics of submicron SOI MOSFETs have been calculated
    Exact
    [7–10]
    Suffix
    . One of the advantages of the method is the possibility of incorporation of rather sophisticated models describing different physical processes into the simulation procedure. Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering.

  2. In-text reference with the coordinate start=9933
    Prefix
    Outlines of ensemble Monte Carlo transport simulation The cross-section of the SOI MOSFET structure under consideration is presented in Figure 1. The simulated structure is a fully depleted single gate SOI MOSFET with the conducting silicon channel laying between gate and buried oxides
    Exact
    [8, 15, 16]
    Suffix
    . The device dimensions denoted in the Figure 1 are as follows: the source, gate and drain lengths are LS = LG = LD = 100 nm, channel thickness Wc = 30 nm, the thickness of buried oxide layer is Wb = 100 nm, and the thickness of the silicon substrate layer Wsub = 200 nm.

  3. In-text reference with the coordinate start=13012
    Prefix
    It must be mentioned that in present work we neglect size quantization effects and consider electron and hole gases as purely three-dimensional. Such approximation must be reasonable for considered channel width
    Exact
    [8, 15]
    Suffix
    . Another problem, which arises while simulating charge carrier transport in SOI MOSFETs, is the treatment of carrier scattering by Si-SiO2 interfaces. For three-dimensional electron and hole gases the scattering of charge carriers by the interfaces is usually regarded as the combination of diffusive and specular reflections of particles from the interface.

9
Zhevnyak O., Borzdov V., Borzdov A., Pozdnyakov D., Komarov F. Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs. Proceedings of SPIE, 2008, vol. 7025, pp. 70251L-1–70251L-8.
Total in-text references: 1
  1. In-text reference with the coordinate start=8096
    Prefix
    Thereupon it must be noted that ensemble Monte Carlo method has been widely used as a powerful tool for simulation of carrier transport phenomena in different semiconductor devices. By means of Monte Carlo simulation static, dynamic and noise characteristics of submicron SOI MOSFETs have been calculated
    Exact
    [7–10]
    Suffix
    . One of the advantages of the method is the possibility of incorporation of rather sophisticated models describing different physical processes into the simulation procedure. Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering.

10
Gamiz F., Sampedro C., Donetti L., Godoy A. Monte-Carlo simulation of ultra-thin film siliconon-insulator MOSFETs. International Journal of High Speed Electronics and Systems, 2013, vol. 22, no. 1, pp. 1350001-1–1350001-32.
Total in-text references: 2
  1. In-text reference with the coordinate start=8096
    Prefix
    Thereupon it must be noted that ensemble Monte Carlo method has been widely used as a powerful tool for simulation of carrier transport phenomena in different semiconductor devices. By means of Monte Carlo simulation static, dynamic and noise characteristics of submicron SOI MOSFETs have been calculated
    Exact
    [7–10]
    Suffix
    . One of the advantages of the method is the possibility of incorporation of rather sophisticated models describing different physical processes into the simulation procedure. Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering.

  2. In-text reference with the coordinate start=8643
    Prefix
    Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering. The simulation procedure also enables inclusion of semiconductor band structure calculations and account of quantum effects as well
    Exact
    [10–14]
    Suffix
    . It is known that inclusion of effects related to impact ionization becomes very important in numerical simulations of short-channel MOSFETs. This is caused by the fact that in such MOSFETs electric field strengths are high enough to make impact ionization rate be comparable or even higher than other dominant scattering mechanisms.

11
Fischetti M.V., Laux S.E. Monte Carlo analysis of electron transport in small semiconductor devices including band structure and space-charge effects. Physical Review B, 1988, vol. 38, no 14, pp. 9721–9745.
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  1. In-text reference with the coordinate start=8643
    Prefix
    Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering. The simulation procedure also enables inclusion of semiconductor band structure calculations and account of quantum effects as well
    Exact
    [10–14]
    Suffix
    . It is known that inclusion of effects related to impact ionization becomes very important in numerical simulations of short-channel MOSFETs. This is caused by the fact that in such MOSFETs electric field strengths are high enough to make impact ionization rate be comparable or even higher than other dominant scattering mechanisms.

12
Duncan A., Ravaioli U., Jacumeit J. Fullband Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors. IEEE Transactions on Electron Devices, 1998, vol. 45, no. 4, pp. 867–876.
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  1. In-text reference with the coordinate start=8643
    Prefix
    Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering. The simulation procedure also enables inclusion of semiconductor band structure calculations and account of quantum effects as well
    Exact
    [10–14]
    Suffix
    . It is known that inclusion of effects related to impact ionization becomes very important in numerical simulations of short-channel MOSFETs. This is caused by the fact that in such MOSFETs electric field strengths are high enough to make impact ionization rate be comparable or even higher than other dominant scattering mechanisms.

13
Buffler F.M., Schenk A., Fichtner W. Efficient Monte Carlo device modeling. IEEE Transactions on Electron Devices, 2000, vol. 47, no. 10, pp. 1891–1897.
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  1. In-text reference with the coordinate start=8643
    Prefix
    Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering. The simulation procedure also enables inclusion of semiconductor band structure calculations and account of quantum effects as well
    Exact
    [10–14]
    Suffix
    . It is known that inclusion of effects related to impact ionization becomes very important in numerical simulations of short-channel MOSFETs. This is caused by the fact that in such MOSFETs electric field strengths are high enough to make impact ionization rate be comparable or even higher than other dominant scattering mechanisms.

14
Donetti L., Gamiz F., Biel B., Sampedro C. Twoband k·p model for Si-(110) electron devices. Journal of Applied Physics, 2013, vol. 114, pp. 073706-1–073706-7.
Total in-text references: 1
  1. In-text reference with the coordinate start=8643
    Prefix
    Ensemble Monte Carlo simulation thus is one of the most promising methods for the simulation of deep submicron SOI MOSFETs, which allows account of all necessary mechanisms of carrier scattering. The simulation procedure also enables inclusion of semiconductor band structure calculations and account of quantum effects as well
    Exact
    [10–14]
    Suffix
    . It is known that inclusion of effects related to impact ionization becomes very important in numerical simulations of short-channel MOSFETs. This is caused by the fact that in such MOSFETs electric field strengths are high enough to make impact ionization rate be comparable or even higher than other dominant scattering mechanisms.

15
Rengel R., Pardo D., Martin M.J. A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications. Semiconductor Science and Technology, 2004, vol. 19, pp. 634–643.
Total in-text references: 2
  1. In-text reference with the coordinate start=9933
    Prefix
    Outlines of ensemble Monte Carlo transport simulation The cross-section of the SOI MOSFET structure under consideration is presented in Figure 1. The simulated structure is a fully depleted single gate SOI MOSFET with the conducting silicon channel laying between gate and buried oxides
    Exact
    [8, 15, 16]
    Suffix
    . The device dimensions denoted in the Figure 1 are as follows: the source, gate and drain lengths are LS = LG = LD = 100 nm, channel thickness Wc = 30 nm, the thickness of buried oxide layer is Wb = 100 nm, and the thickness of the silicon substrate layer Wsub = 200 nm.

  2. In-text reference with the coordinate start=13012
    Prefix
    It must be mentioned that in present work we neglect size quantization effects and consider electron and hole gases as purely three-dimensional. Such approximation must be reasonable for considered channel width
    Exact
    [8, 15]
    Suffix
    . Another problem, which arises while simulating charge carrier transport in SOI MOSFETs, is the treatment of carrier scattering by Si-SiO2 interfaces. For three-dimensional electron and hole gases the scattering of charge carriers by the interfaces is usually regarded as the combination of diffusive and specular reflections of particles from the interface.

16
Borzdov A.V., Borzdov V.M., V’yurkov V.V. Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET. Proceedings of SPIE, 2014, vol. 9440, pp. 944013-1–944013-7.
Total in-text references: 2
  1. In-text reference with the coordinate start=9933
    Prefix
    Outlines of ensemble Monte Carlo transport simulation The cross-section of the SOI MOSFET structure under consideration is presented in Figure 1. The simulated structure is a fully depleted single gate SOI MOSFET with the conducting silicon channel laying between gate and buried oxides
    Exact
    [8, 15, 16]
    Suffix
    . The device dimensions denoted in the Figure 1 are as follows: the source, gate and drain lengths are LS = LG = LD = 100 nm, channel thickness Wc = 30 nm, the thickness of buried oxide layer is Wb = 100 nm, and the thickness of the silicon substrate layer Wsub = 200 nm.

  2. In-text reference with the coordinate start=17709
    Prefix
    Previously, the comparison of soft and hard threshold models was done while simulating electrical characteristics and effective threshold energy in deep submicron MOSFET in [28]. Also in the framework of Keldysh model some aspects of impact ionization effective threshold energy in deep submicron silicon MOSFETs were investigated in
    Exact
    [16, 29]
    Suffix
    . In this study we will use the parameters of the soft threshold as by now it is supposed that impact ionization process is more likely to occur within the soft threshold model and estimations based on full-band calculations indicate this.

17
Hockney R.W., Eastwood J.W. Computer simulations using particles, McGraw-Hill, New York, 1981, 640 p.
Total in-text references: 1
  1. In-text reference with the coordinate start=11568
    Prefix
    After every time step Δt the 163 Poisson equation with appropriate boundary conditions is solved in order to update the electrostatic potential. The calculation of free carrier charge density within the simulation dimensions is performed using so-called particle technique
    Exact
    [17]
    Suffix
    . The Monte Carlo procedure is two-dimensional in real space and three-dimensional in momentum space. The latter is caused by the fact that state-of-the-art planar technology implies that the device width in the dimension perpendicular to the figure plane (see Figure 1) is much higher than its length L = LS +LG +LD and depth W = Wc +Wb +Wsub.

18
Jacoboni C., Lugli P. The Monte Carlo method for semiconductor device simulation, Springer, Wien– New York, 1989, 357 p.
Total in-text references: 2
  1. In-text reference with the coordinate start=12071
    Prefix
    latter is caused by the fact that state-of-the-art planar technology implies that the device width in the dimension perpendicular to the figure plane (see Figure 1) is much higher than its length L = LS +LG +LD and depth W = Wc +Wb +Wsub. The time step Δt is chosen to be 1 fs. A general description of the Monte Carlo simulation approach may be found elsewhere
    Exact
    [18]
    Suffix
    . It is considered that the contacts of the drain, the source, and the substrate are ideal ohmic contacts. The metallic gate is assumed to be aluminum. Ideal ohmic contact model implies that a contact is in thermal equilibrium though the current is flowing through it.

  2. In-text reference with the coordinate start=14356
    Prefix
    Electron transport in the conduction band of silicon is simulated in valleys X and L, with account of the nonparabolicity effect. The intravalley and intervalley electron scattering by phonons, scattering by the ionized impurity, plasmons, and impact ionization process are taken into account
    Exact
    [18, 20]
    Suffix
    . It is known that the band structure of silicon in valley X can be represented by three pairs of equivalent valleys, the isoenergetic surfaces of which in k space are ellipsoids of a revolution with the axes of symmetry oriented along crystallographic directions of the type (100).

19
Gonzalez T., Pardo D. Physical models of ohmic contact for Monte Carlo device simulation. Solid-State Electronics, 1996, vol. 39, no. 4, pp. 555–562.
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  1. In-text reference with the coordinate start=12686
    Prefix
    The latter means that the contact injects particles to provide charge neutrality in a small region of semiconductor near the contact edge. We suppose that injected particles have Maxwellian distribution and also we use the injection model which takes into account that particles are not injected simultaneously
    Exact
    [19]
    Suffix
    . Particles reaching the contact from inside the simulation domain leave the device freely. It must be mentioned that in present work we neglect size quantization effects and consider electron and hole gases as purely three-dimensional.

20
Jacoboni C., Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Reviews of Modern Physics, 1983, vol. 55, no. 3, pp. 645–705.
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  1. In-text reference with the coordinate start=14356
    Prefix
    Electron transport in the conduction band of silicon is simulated in valleys X and L, with account of the nonparabolicity effect. The intravalley and intervalley electron scattering by phonons, scattering by the ionized impurity, plasmons, and impact ionization process are taken into account
    Exact
    [18, 20]
    Suffix
    . It is known that the band structure of silicon in valley X can be represented by three pairs of equivalent valleys, the isoenergetic surfaces of which in k space are ellipsoids of a revolution with the axes of symmetry oriented along crystallographic directions of the type (100).

21
Rodriguez-Bolivar S., Gomez-Campos F.M., Carceller J.E. Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge. Semiconductor Science and Technology, 2005, no. 20, pp. 16–22.
Total in-text references: 2
  1. In-text reference with the coordinate start=15910
    Prefix
    In this study, the hole transport is simulated similarly to the electron transport in the effective mass approximation allowing for the nonparabolicity and anisotropy of the dispersion relation in the valence band. To do that we follow the work by RodriguezBolivar et al.
    Exact
    [21]
    Suffix
    . The transport is taken into account in the band of heavy and light holes, and in the split-off band. The scattering of holes by acoustic and optical phonons and by ionized impurity are involved in the model [22, 23].

  2. In-text reference with the coordinate start=20467
    Prefix
    4.22; B = –0.78; C = 4.80; θ and j are the angles in a spherical coordinate system in the space of wave vectors; m0 is the free electron mass; mso is the hole effective mass in the split-off band; Δso = 0.044 eV; and χ are the functions that describe the nonparabolicity of the dispersion relation in the valence band, the form and approximation of which are presented in
    Exact
    [21]
    Suffix
    . Impact ionization process simulation Impact ionization is a threshold process [24– 26]. In a simple case, threshold energy Eth can be determined using the energy and momentum conservation laws and minimization of the energy of final particles.

22
Rodriguez-Bolivar S., Gomez-Campos F.M., Gamiz F., Carceller J.E. Implications of nonparabolicity, warping, and inelastic phonon scattering on hole transport in pure Si and Ge within the effective mass framework. Journal of Applied Physics, 2005, vol. 97, pp. 013702- 1–013702-10.
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  1. In-text reference with the coordinate start=16123
    Prefix
    The transport is taken into account in the band of heavy and light holes, and in the split-off band. The scattering of holes by acoustic and optical phonons and by ionized impurity are involved in the model
    Exact
    [22, 23]
    Suffix
    . Dispersion relations for holes can be written in the form: (2) (3) (4) (5) EE k m i ii ().1 2 22 1 3 += = α∑  Ek k m LLAgEE()(,)(),;=+()≥ 22 20 10θφχ Ek k m soEE so ()sososo(),;=+≥ 22 2 χ∆∆ g B A C A (,)(sinsincoscossin).θφθφφθθ=++ 2 2 2 2 42222 Ek k m HHAgEE()(,)(),;=−()≥ 22 20 10θφχ 164 In equalities (2)–(5), indices «H», «L», and «so» tering rate of electrons by ph

23
Gomez-Campos F.M., Rodriguez-Bolivar S., Carceller J.E. An efficient Monte Carlo procedure for studying hole transport in doped semiconductors. Journal of Computational Electronics, 2004, no. 3, pp. 329–332.
Total in-text references: 1
  1. In-text reference with the coordinate start=16123
    Prefix
    The transport is taken into account in the band of heavy and light holes, and in the split-off band. The scattering of holes by acoustic and optical phonons and by ionized impurity are involved in the model
    Exact
    [22, 23]
    Suffix
    . Dispersion relations for holes can be written in the form: (2) (3) (4) (5) EE k m i ii ().1 2 22 1 3 += = α∑  Ek k m LLAgEE()(,)(),;=+()≥ 22 20 10θφχ Ek k m soEE so ()sososo(),;=+≥ 22 2 χ∆∆ g B A C A (,)(sinsincoscossin).θφθφφθθ=++ 2 2 2 2 42222 Ek k m HHAgEE()(,)(),;=−()≥ 22 20 10θφχ 164 In equalities (2)–(5), indices «H», «L», and «so» tering rate of electrons by ph

24
Keldysh L.V. Concerning the theory of impact ionization in semiconductors. Soviet Physics JETP, 1965, vol. 21, no. 6, pp. 1135–1144.
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  1. In-text reference with the coordinate start=21677
    Prefix
    When simulating the electric properties of bulk silicon and silicon MOSFETs by the Monte Carlo method, in order to calculate the dependence of impact ionization scattering rate WII(E) with specified threshold energy Eth on energy E, many authors currently use Keldysh formula
    Exact
    [24, 27]
    Suffix
    : (6) where P is a parameter and Wph(Eth) is the total scat165 sible to define carrier states after the impact ionizaa rapid rise of current density in the channel for VD > 1.5 V.

25
Kane E.O. Electron scattering by pair production in silicon. Physical Review, 1967, vol. 159, no. 3, pp. 624–631.
Total in-text references: 8
  1. In-text reference with the coordinate start=19028
    Prefix
    most common situation for Keldysh model is the definition of particle final states after scattering via the assumption that near threshold the group velocities of the final particles are equal and for spherical parabolic bands all wave vectors are collinear [27]. By now more sophisticated models of impact ionization process based on full-band calculations have been developed
    Exact
    [25, 30–32]
    Suffix
    . These types of models usually have no fitting parameters, but their implementation is restricted by the complexity of scattering rate calculation and definition of the particle final states which result in too much computational effort.

  2. In-text reference with the coordinate start=21373
    Prefix
    values of threshold energies are possible and it may be concluded that the effective (or average) threshold energy of charge carriers depend on electric field strength. The effective threshold energy can be defined as the energy corresponding to maximum value of the product of impact ionization cross section and electron distribution function
    Exact
    [25]
    Suffix
    . When simulating the electric properties of bulk silicon and silicon MOSFETs by the Monte Carlo method, in order to calculate the dependence of impact ionization scattering rate WII(E) with specified threshold energy Eth on energy E, many authors currently use Keldysh formula [24, 27]: (6) where P is a parameter and Wph(

  3. In-text reference with the coordinate start=22097
    Prefix
    scattering rate WII(E) with specified threshold energy Eth on energy E, many authors currently use Keldysh formula [24, 27]: (6) where P is a parameter and Wph(Eth) is the total scat165 sible to define carrier states after the impact ionizaa rapid rise of current density in the channel for VD > 1.5 V. While the full-band model
    Exact
    [25]
    Suffix
    gives a rather moderate avalanche multiplication in the channel under considered simulation conditions. The latter proves that the use of more rigorous models based on the calculation of realistic silicon band structure may be crucial for calculation of submicron SOI MOSFET characteristics. tion event.

  4. In-text reference with the coordinate start=22731
    Prefix
    In our opinion the procedure is the most suitable for application in Monte Carlo simulations among other approaches based on full-band calculations. The aim of current study was to compare the influence of the choice between soft threshold Keldysh [27] and full-band
    Exact
    [25]
    Suffix
    electron impact ionization models on the calculation of the SOI MOSFET characteristics and determine the device operation modes when impact ionization starts to make sufficient influence on the channel current.

  5. In-text reference with the coordinate start=23602
    Prefix
    Figure 3 – Electron drift velocity (a) and average kinetic energy (b) along the transistor channel at VD = 2,5 V and VG = 1,5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – full-band model
    Exact
    [25]
    Suffix
    , and dotted curves – Keldysh model [27] In the Figures 3 and 4 the results of calculated electron drift velocities and average energy versus the distance along the transistor channel with the use of both Keldysh and full band models are presented.

  6. In-text reference with the coordinate start=24430
    Prefix
    At the same time the difference in current densities (see Figure 2) for given models is already significant. The latter may be Figure 2 – Current-voltage characteristics of the SOI MOSFET: solid curves – impact ionization process is not taken into account, dashed curves – full-band
    Exact
    [25]
    Suffix
    and dotted curves – Keldysh [27] model of impact ionization Analysis of Figure 2 shows that the linear region of the I–V characteristics for the transistor corresponds to the drain voltage range 0 ≤ VD ≤ 0.5 V.

  7. In-text reference with the coordinate start=25628
    Prefix
    For a given transistor structure Keldysh model gives 166 referred to much higher electron-hole pair generation Figure 4 – Electron drift velocity (a) and average kinetic energy (b) along the transistor channel at VD = 3.5 V and VG = 1.5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – fullband model
    Exact
    [25]
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    , and dotted curves – Keldysh model [27] It should be mentioned here that according to our simulation the scattering rates calculated by all fullband approaches, presented in [25, 30–32] give close values of the drain current.

  8. In-text reference with the coordinate start=25808
    Prefix
    a) and average kinetic energy (b) along the transistor channel at VD = 3.5 V and VG = 1.5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – fullband model [25], and dotted curves – Keldysh model [27] It should be mentioned here that according to our simulation the scattering rates calculated by all fullband approaches, presented in
    Exact
    [25, 30–32]
    Suffix
    give close values of the drain current. So the most convenient may be the use of equation (7) for calculation of impact ionization scattering rate as it has the same simplicity as Keldysh formula (6).

27
Ridley B.K. Soft-threshold lucky drift theory of impact ionization in semiconductors. Semiconductor Science and Technology, 1987, no. 22, pp. 116–122.
Total in-text references: 7
  1. In-text reference with the coordinate start=16922
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    The most common values for these parameters for silicon are Eth = 1.2 eV and P = 0.38 for so called «soft» threshold model and Eth = 1.8 eV and P = 100 for so called «hard» threshold model
    Exact
    [27]
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    . Briefly the difference between these two kinds of Keldysh models can be described as follows. In the hard threshold model it is assumed that during the impact ionization event the rules of energy and momentum conservation must be fulfilled.

  2. In-text reference with the coordinate start=18894
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    The most common situation for Keldysh model is the definition of particle final states after scattering via the assumption that near threshold the group velocities of the final particles are equal and for spherical parabolic bands all wave vectors are collinear
    Exact
    [27]
    Suffix
    . By now more sophisticated models of impact ionization process based on full-band calculations have been developed [25, 30–32]. These types of models usually have no fitting parameters, but their implementation is restricted by the complexity of scattering rate calculation and definition of the particle final states which result in too much computational effort.

  3. In-text reference with the coordinate start=21677
    Prefix
    When simulating the electric properties of bulk silicon and silicon MOSFETs by the Monte Carlo method, in order to calculate the dependence of impact ionization scattering rate WII(E) with specified threshold energy Eth on energy E, many authors currently use Keldysh formula
    Exact
    [24, 27]
    Suffix
    : (6) where P is a parameter and Wph(Eth) is the total scat165 sible to define carrier states after the impact ionizaa rapid rise of current density in the channel for VD > 1.5 V.

  4. In-text reference with the coordinate start=22713
    Prefix
    In our opinion the procedure is the most suitable for application in Monte Carlo simulations among other approaches based on full-band calculations. The aim of current study was to compare the influence of the choice between soft threshold Keldysh
    Exact
    [27]
    Suffix
    and full-band [25] electron impact ionization models on the calculation of the SOI MOSFET characteristics and determine the device operation modes when impact ionization starts to make sufficient influence on the channel current.

  5. In-text reference with the coordinate start=23647
    Prefix
    Figure 3 – Electron drift velocity (a) and average kinetic energy (b) along the transistor channel at VD = 2,5 V and VG = 1,5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – full-band model [25], and dotted curves – Keldysh model
    Exact
    [27]
    Suffix
    In the Figures 3 and 4 the results of calculated electron drift velocities and average energy versus the distance along the transistor channel with the use of both Keldysh and full band models are presented.

  6. In-text reference with the coordinate start=24465
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    The latter may be Figure 2 – Current-voltage characteristics of the SOI MOSFET: solid curves – impact ionization process is not taken into account, dashed curves – full-band [25] and dotted curves – Keldysh
    Exact
    [27]
    Suffix
    model of impact ionization Analysis of Figure 2 shows that the linear region of the I–V characteristics for the transistor corresponds to the drain voltage range 0 ≤ VD ≤ 0.5 V. The saturation region occurs at voltages VD > 0.5 V, up to approximately 1.5 V.

  7. In-text reference with the coordinate start=25668
    Prefix
    structure Keldysh model gives 166 referred to much higher electron-hole pair generation Figure 4 – Electron drift velocity (a) and average kinetic energy (b) along the transistor channel at VD = 3.5 V and VG = 1.5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – fullband model [25], and dotted curves – Keldysh model
    Exact
    [27]
    Suffix
    It should be mentioned here that according to our simulation the scattering rates calculated by all fullband approaches, presented in [25, 30–32] give close values of the drain current. So the most convenient may be the use of equation (7) for calculation of impact ionization scattering rate as it has the same simplicity as Keldysh formula (6).

28
Speransky D., Borzdov A., Borzdov V. Impact ionization process in deep submicron MOSFET. International Journal of Microelectronics and Computer Science, 2012, vol. 3, no.1, pp. 21–24.
Total in-text references: 1
  1. In-text reference with the coordinate start=17535
    Prefix
    Due to this fact restriction associated with the momentum conservation may be neglected. Previously, the comparison of soft and hard threshold models was done while simulating electrical characteristics and effective threshold energy in deep submicron MOSFET in
    Exact
    [28]
    Suffix
    . Also in the framework of Keldysh model some aspects of impact ionization effective threshold energy in deep submicron silicon MOSFETs were investigated in [16, 29]. In this study we will use the parameters of the soft threshold as by now it is supposed that impact ionization process is more likely to occur within the soft threshold model and estimations based on full-band

29
Borzdov V.M., Borzdov A.V., Speransky D.S., V’yurkov V.V., Orlikovsky A.A. Evaluation of the effective threshold energy of interband impact ionization in a deep-submicron silicon n-channel MOS transistor. Russian Microelectronics, 2014, vol. 43, no. 3, pp 189–193.
Total in-text references: 1
  1. In-text reference with the coordinate start=17709
    Prefix
    Previously, the comparison of soft and hard threshold models was done while simulating electrical characteristics and effective threshold energy in deep submicron MOSFET in [28]. Also in the framework of Keldysh model some aspects of impact ionization effective threshold energy in deep submicron silicon MOSFETs were investigated in
    Exact
    [16, 29]
    Suffix
    . In this study we will use the parameters of the soft threshold as by now it is supposed that impact ionization process is more likely to occur within the soft threshold model and estimations based on full-band calculations indicate this.

30
Sano N., Aoki T., Tomizawa M., Yoshii A. Electron transport and impact ionization in Si. Physical Review B, 1990, vol. 41, no. 17, pp. 12122–12128.
Total in-text references: 2
  1. In-text reference with the coordinate start=19028
    Prefix
    most common situation for Keldysh model is the definition of particle final states after scattering via the assumption that near threshold the group velocities of the final particles are equal and for spherical parabolic bands all wave vectors are collinear [27]. By now more sophisticated models of impact ionization process based on full-band calculations have been developed
    Exact
    [25, 30–32]
    Suffix
    . These types of models usually have no fitting parameters, but their implementation is restricted by the complexity of scattering rate calculation and definition of the particle final states which result in too much computational effort.

  2. In-text reference with the coordinate start=25808
    Prefix
    a) and average kinetic energy (b) along the transistor channel at VD = 3.5 V and VG = 1.5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – fullband model [25], and dotted curves – Keldysh model [27] It should be mentioned here that according to our simulation the scattering rates calculated by all fullband approaches, presented in
    Exact
    [25, 30–32]
    Suffix
    give close values of the drain current. So the most convenient may be the use of equation (7) for calculation of impact ionization scattering rate as it has the same simplicity as Keldysh formula (6).

31
Sano N., Yoshii A. Impact ionization rate near thresholds in Si. Journal of Applied Physics, 1994, vol. 75, no. 10, pp. 5102–5105.
Total in-text references: 2
  1. In-text reference with the coordinate start=19028
    Prefix
    most common situation for Keldysh model is the definition of particle final states after scattering via the assumption that near threshold the group velocities of the final particles are equal and for spherical parabolic bands all wave vectors are collinear [27]. By now more sophisticated models of impact ionization process based on full-band calculations have been developed
    Exact
    [25, 30–32]
    Suffix
    . These types of models usually have no fitting parameters, but their implementation is restricted by the complexity of scattering rate calculation and definition of the particle final states which result in too much computational effort.

  2. In-text reference with the coordinate start=25808
    Prefix
    a) and average kinetic energy (b) along the transistor channel at VD = 3.5 V and VG = 1.5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – fullband model [25], and dotted curves – Keldysh model [27] It should be mentioned here that according to our simulation the scattering rates calculated by all fullband approaches, presented in
    Exact
    [25, 30–32]
    Suffix
    give close values of the drain current. So the most convenient may be the use of equation (7) for calculation of impact ionization scattering rate as it has the same simplicity as Keldysh formula (6).

32
Kamakura Y., Mizuno H., Yamaji M., Morifuji M., Taniguchi K., Hamaguchi C., Kunikiyo T., Takenaka M. Impact ionization model for full band Monte Carlo simulation. Journal of Applied Physics, 1994, vol. 75, no. 7, pp. 3500–3507.
Total in-text references: 4
  1. In-text reference with the coordinate start=19028
    Prefix
    most common situation for Keldysh model is the definition of particle final states after scattering via the assumption that near threshold the group velocities of the final particles are equal and for spherical parabolic bands all wave vectors are collinear [27]. By now more sophisticated models of impact ionization process based on full-band calculations have been developed
    Exact
    [25, 30–32]
    Suffix
    . These types of models usually have no fitting parameters, but their implementation is restricted by the complexity of scattering rate calculation and definition of the particle final states which result in too much computational effort.

  2. In-text reference with the coordinate start=19336
    Prefix
    These types of models usually have no fitting parameters, but their implementation is restricted by the complexity of scattering rate calculation and definition of the particle final states which result in too much computational effort. Basing on the full-band approach in
    Exact
    [32]
    Suffix
    the expression for impact ionization scattering rate for silicon was derived in a rather simple fitted form: (7) where electron energy E is in eV. Moreover, the calculation revealed that the average energy of secondary generated particles depends linearly on the primary electron energy after the scattering event.

  3. In-text reference with the coordinate start=25808
    Prefix
    a) and average kinetic energy (b) along the transistor channel at VD = 3.5 V and VG = 1.5 V: solid curves correspond to the case when impact ionization process is neglected, dashed curves – fullband model [25], and dotted curves – Keldysh model [27] It should be mentioned here that according to our simulation the scattering rates calculated by all fullband approaches, presented in
    Exact
    [25, 30–32]
    Suffix
    give close values of the drain current. So the most convenient may be the use of equation (7) for calculation of impact ionization scattering rate as it has the same simplicity as Keldysh formula (6).

  4. In-text reference with the coordinate start=26114
    Prefix
    So the most convenient may be the use of equation (7) for calculation of impact ionization scattering rate as it has the same simplicity as Keldysh formula (6). For the definition of the final states we chose the procedure proposed in
    Exact
    [32]
    Suffix
    and shortly discussed earlier as the most convenient from the computational point of view among others based on full-band approach. Conclusion In this study electric characteristics of a deep submicron SOI MOSFET with 100 nm channel length have been simulated by means of ensemble Monte Carlo method.

33
Kunikiyo T., Takenaka M., Morifuji M., Taniguchi K., Hamaguchi C. A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation. Journal of Applied Physics, 1996, vol. 79, no. 10, pp. 7718–7725.
Total in-text references: 1
  1. In-text reference with the coordinate start=23147
    Prefix
    models on the calculation of the SOI MOSFET characteristics and determine the device operation modes when impact ionization starts to make sufficient influence on the channel current. In current study we regard only impact ionization by electrons since they are the main charge carriers in the SOI MOSFET. Also the threshold energy for holes is high enough (1,49 eV)
    Exact
    [33]
    Suffix
    . Results and discussion The current–voltage (I–V) characteristics of the simulated SOI MOSFET both with and without account of the impact ionization process are presented in Figure 2.