The 16 references with contexts in paper S. Zolotovskaya A., K. Wilcox G., A. Abdolvand, D. Livshits A., E. Rafailov U., С. Золотовская А., К. Вилкокс Г., А. Абдольванд , Д. Лившиц А., Э. Рафаилов У. (2015) “ЭЛЕКТРОННЫЙ КОНТРОЛЬ ВЫХОДНЫХ ПАРАМЕТРОВ ЛАЗЕРА НА ОСНОВЕ КРИСТАЛЛА CR4+:ФОРСТЕРИТ С ПАССИВНОЙ СИНХРОНИЗАЦИЕЙ МОД ДЛЯ НОВЫХ СИСТЕМ ФОРМИРОВАНИЯ ИЗОБРАЖЕНИЯ И МАНИПУЛЯЦИИ // A PASSIVELY MODE-LOCKED CR4+:FORSTERITE LASER WITH ELEСTRONICALLY CONTROLLED OUTPUT CHARACTERISTICS” / spz:neicon:pimi:y:2011:i:1:p:85-90

1
Ouellette, M. P. Pulse shaping and passive modelocking with a nonlinear Michelson interferometer / M. P. Ouellette // Opt. Commun. – 1986. – No 60, – Р. 99–103.
Total in-text references: 1
  1. In-text reference with the coordinate start=1267
    Prefix
    The techniques, commonly used to generate ultrashort optical pulses from tunable solid-state lasers, include active and passive mode-locking. Passive modelocking of solid-state lasers has made tremendous progress during last decade, following the introduction of three novel techniques: additive-pulse mode-locking
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    [1]
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    , Kerr lens [2] and semiconductor saturable absorber (SESAM) [3] mode-locking. Of these, the first two techniques employ quasiinstantaneous third-order optical nonlinearity to create an artificial fast saturable absorber.

2
Spence, D.E. 60-fsec pulse generation from a selfmode-locked Ti:sapphire laser / D.E. Spence, P. N. Kean, W. Sibbett // Opt. Lett. – 1991. – No 16, – Р. 42–44.
Total in-text references: 1
  1. In-text reference with the coordinate start=1282
    Prefix
    Passive modelocking of solid-state lasers has made tremendous progress during last decade, following the introduction of three novel techniques: additive-pulse mode-locking [1], Kerr lens
    Exact
    [2]
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    and semiconductor saturable absorber (SESAM) [3] mode-locking. Of these, the first two techniques employ quasiinstantaneous third-order optical nonlinearity to create an artificial fast saturable absorber.

3
Keller, U. Broadband fast semiconductor saturable absorber / Keller U. [et al.] // Opt. Lett. – 1992. – Vol. 17.– Р. 505–507.
Total in-text references: 1
  1. In-text reference with the coordinate start=1331
    Prefix
    Passive modelocking of solid-state lasers has made tremendous progress during last decade, following the introduction of three novel techniques: additive-pulse mode-locking [1], Kerr lens [2] and semiconductor saturable absorber (SESAM)
    Exact
    [3]
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    mode-locking. Of these, the first two techniques employ quasiinstantaneous third-order optical nonlinearity to create an artificial fast saturable absorber. SESAM mode-locking represents saturable absorbers in the classical sense based on the fast relaxation time of carriers.

4
Lagatsky, A. A. Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers / Lagatsky A. A. [et al.] // J. Progress in Quantum Electronics. – 2010. – No 34, – Р. 1– 45.
Total in-text references: 1
  1. In-text reference with the coordinate start=2097
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    Bandgap engineering has allowed SESAM technology to be applied across a broad spectral range, with many different laser types. Quantum dotbased SESAMs (QD-SESAMs) have been used to assist and sustain passive mode-locking in a variety of solid-state laser systems emitting in the spectral range of 1,0–1,3 μm
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    [4]
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    . Laser sources with controllable output characteristics are of special interest to improve the flexibility of the systems for end users. Electronic control of laser parameters, in particular switching between continuous wave (CW) and pulse-durationcontrollable mode-locked operation, is beneficial for novel imaging and manipulation systems [5].

5
Agate, B. Femtosecond optical tweezers for insitu control of two-photon fluorescence / Agate B. [et al.] // Opt. Exp. – 2004. – No 12, – Р. 3011–3017.
Total in-text references: 1
  1. In-text reference with the coordinate start=2454
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    Electronic control of laser parameters, in particular switching between continuous wave (CW) and pulse-durationcontrollable mode-locked operation, is beneficial for novel imaging and manipulation systems
    Exact
    [5]
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    . Employment of a single laser source, capable of fast switching between two operational regimes, can also be advantageous for trapping and manipulation of biological objects with subsequent photoporation or dissection [6, 7].

6
Stevenson, D. Femtosecond optical transfection of cells: viability and efficiency / Stevenson D. [et al.] // Opt. Exp. – 2006. – No 14, – Р. 7125– 7133. Figure 5 – Calculated DBR reflectivity (R), group delay dispersion (GGD) and longitudinal confinement factor spectrum (|E|2) of the p-n junction QD-SESAM used. The vertical line indicates the Cr4+:forsterite central operating wavelength Приборы и методы измерений, No 1(2), 2011 89
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  1. In-text reference with the coordinate start=2691
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    Employment of a single laser source, capable of fast switching between two operational regimes, can also be advantageous for trapping and manipulation of biological objects with subsequent photoporation or dissection
    Exact
    [6, 7]
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    . Semiconductor edge emitter laser development has led the way in this, with the laser output controllable by applying a reverse bias to a p-i-n saturable absorber section [8, 9]. The concept of a voltage controllable p-i-n saturable absorber has also been applied to solidstate lasers, however, with limited success.

7
Ando, J. Optical trapping and surgery of living yeast cells using a single laser / Ando J. [et al.] // Rev. Sci. Instrum. – 2008. – No 79, – Р. 103705.
Total in-text references: 1
  1. In-text reference with the coordinate start=2691
    Prefix
    Employment of a single laser source, capable of fast switching between two operational regimes, can also be advantageous for trapping and manipulation of biological objects with subsequent photoporation or dissection
    Exact
    [6, 7]
    Suffix
    . Semiconductor edge emitter laser development has led the way in this, with the laser output controllable by applying a reverse bias to a p-i-n saturable absorber section [8, 9]. The concept of a voltage controllable p-i-n saturable absorber has also been applied to solidstate lasers, however, with limited success.

8
Thompson, M. G. Regimes of mode-locking in tapered quantum dot laser diodes / M. G. Thompson, R. V. Penty, I. H. White // Proc. IEEE 21st Int. Semiconductor Laser Conf. 2008, Sorrento, Italy, – Р. 27–28.
Total in-text references: 1
  1. In-text reference with the coordinate start=2881
    Prefix
    laser source, capable of fast switching between two operational regimes, can also be advantageous for trapping and manipulation of biological objects with subsequent photoporation or dissection [6, 7]. Semiconductor edge emitter laser development has led the way in this, with the laser output controllable by applying a reverse bias to a p-i-n saturable absorber section
    Exact
    [8, 9]
    Suffix
    . The concept of a voltage controllable p-i-n saturable absorber has also been applied to solidstate lasers, however, with limited success. An electrically-enhanced SESAM-like structure for passive mode-locking of a Ti3+:sapphire laser permitted a degree of control, demonstrating switching between pulses of duration one nanosecond to several hundreds of picoseconds [10].

9
Rafailov, E. U. High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser / Rafailov E. U. [et al.] // Appl. Phys. Lett. – 2005. – No 87, – Р. 081107-1.
Total in-text references: 1
  1. In-text reference with the coordinate start=2881
    Prefix
    laser source, capable of fast switching between two operational regimes, can also be advantageous for trapping and manipulation of biological objects with subsequent photoporation or dissection [6, 7]. Semiconductor edge emitter laser development has led the way in this, with the laser output controllable by applying a reverse bias to a p-i-n saturable absorber section
    Exact
    [8, 9]
    Suffix
    . The concept of a voltage controllable p-i-n saturable absorber has also been applied to solidstate lasers, however, with limited success. An electrically-enhanced SESAM-like structure for passive mode-locking of a Ti3+:sapphire laser permitted a degree of control, demonstrating switching between pulses of duration one nanosecond to several hundreds of picoseconds [10].

10
Stormont, B. Extended-cavity surface-emitting diode laser as active mirror controlling modelocked Ti:sapphire laser / B. Stormont [et al.] // – Electron. Lett. – 2004. – No 40, – Р. 732– 734.
Total in-text references: 1
  1. In-text reference with the coordinate start=3265
    Prefix
    An electrically-enhanced SESAM-like structure for passive mode-locking of a Ti3+:sapphire laser permitted a degree of control, demonstrating switching between pulses of duration one nanosecond to several hundreds of picoseconds
    Exact
    [10]
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    . More recently a QD-based SESAM, with incorporated p-n junction, was used to stabilise a passively modelocked Yb3+:KYW laser under reverse bias voltage conditions [11]. In this paper, a passively mode-locked Cr4+:forsterite laser with electronically controlled pulse duration is demonstrated.

11
Lagatsky, A. A. Quantum-dot-based saturable absorber with p-n junction for mode-locking of solid-state lasers / A. A. Lagatsky [et al.] – IEEE Photon. Technol. Lett. – 2005. – No 17, – Р. 294– 296.
Total in-text references: 1
  1. In-text reference with the coordinate start=3440
    Prefix
    -enhanced SESAM-like structure for passive mode-locking of a Ti3+:sapphire laser permitted a degree of control, demonstrating switching between pulses of duration one nanosecond to several hundreds of picoseconds [10]. More recently a QD-based SESAM, with incorporated p-n junction, was used to stabilise a passively modelocked Yb3+:KYW laser under reverse bias voltage conditions
    Exact
    [11]
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    . In this paper, a passively mode-locked Cr4+:forsterite laser with electronically controlled pulse duration is demonstrated. A DC voltage controlled p-n junction quantum dot semiconductor saturable absorber mirror is presented.

12
Malins., D. B. Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3μm / D. B. Malins. [et al.] // Appl. Phys. Lett. – 2006. – No 89, – Р. 171111-1.
Total in-text references: 1
  1. In-text reference with the coordinate start=10185
    Prefix
    The decrease in average output power from 47 mW, attained with unbiased QD-SESAM mode-locking, to 29 mW, obtained from the Cr4+:forsterite laser with voltage -4,5 V applied on the p-n junction QD-SESAM, was attributed to DC electroabsorption
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    [12, 13]
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    , contributing as additional nonsaturable loss introduced in the SESAM structure at higher bias. A red-shift of mode-locked Cr4+:forsterite laser central operating wavelength observed with an increase in applied reverse bias on the p-n junction QD-SESAM.

13
Karin, J. R. Ultrafast dynamics in field-enhanced saturable absorbers / J. R. Karin [et al.] // Appl. Phys. Lett. – 1994. – No 64, – Р. 676–678.
Total in-text references: 2
  1. In-text reference with the coordinate start=10185
    Prefix
    The decrease in average output power from 47 mW, attained with unbiased QD-SESAM mode-locking, to 29 mW, obtained from the Cr4+:forsterite laser with voltage -4,5 V applied on the p-n junction QD-SESAM, was attributed to DC electroabsorption
    Exact
    [12, 13]
    Suffix
    , contributing as additional nonsaturable loss introduced in the SESAM structure at higher bias. A red-shift of mode-locked Cr4+:forsterite laser central operating wavelength observed with an increase in applied reverse bias on the p-n junction QD-SESAM.

  2. In-text reference with the coordinate start=12286
    Prefix
    A clear exponential decrease in the slow component of the characteristic recovery time of semiconductor saturable absorbers has been observed in a number of material structures with increasing reverse bias. Recovery time shorting to 700 fs has been measured in a p-i-n InAs dot-in-a-well waveguide structure at 1,28 μm with an applied reverse bias of 300 kV/cm at room temperature
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    [13]
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    . An exponential-like decrease of the mode-locked pulse width with increasing reverse bias on the absorber section in a two-section InGaAs QD laser diode was demonstrated and attributed to the exponential dependence of the absorber recovery time on applied reverse bias [15].

14
Malins, D. B. Electro-absorption and electrorefraction in an InAs quantum dot waveguide modulator / Malins D. B. [et al.] // IEEE Photon. Technol. Lett. – 2007. – No 19, – Р. 1118–1120.
Total in-text references: 1
  1. In-text reference with the coordinate start=11006
    Prefix
    Previously reported field dependent refractive index change for a broadband transmission measurements in the 1,3 μm region in a p-i-n InAs dot-in-a-well waveguide modulator, for a range of reverse bias (0– 10 V), revealed the refractive index change of 0,001
    Exact
    [14]
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    . A different pulse intensity profile, i.e. Gaussian for 0 V reverse bias on the SESAM structure and sech2 for an applied bias of –4,5 V, indicates the presence of high-order dispersion in the laser cavity for the unbiased SESAM configuration.

15
Thompson, M. G. Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers / M. G. Thompson [et al.] // Appl. Phys. Lett. – 2006. – No 88, – Р. 133119.
Total in-text references: 1
  1. In-text reference with the coordinate start=12570
    Prefix
    An exponential-like decrease of the mode-locked pulse width with increasing reverse bias on the absorber section in a two-section InGaAs QD laser diode was demonstrated and attributed to the exponential dependence of the absorber recovery time on applied reverse bias
    Exact
    [15]
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    . A reduction in the simulated pulse duration from 8 to 3 ps, corresponding to about 2,7 times mode-locked pulse duration shortening, was observed for absorber lifetime reduction from 40 to 20 ps for multi-section laser diode implementations [16].

16
Yang, W. Study of passive mode locking of semiconductor lasers using time-domain modeling / W. Yang, A. Gopinath // Appl. Phys. Lett. – 1993 – No 63. – Р. 2717. Золотовская С. А., Вилкокс К. Г., Абдоль
Total in-text references: 1
  1. In-text reference with the coordinate start=12823
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    A reduction in the simulated pulse duration from 8 to 3 ps, corresponding to about 2,7 times mode-locked pulse duration shortening, was observed for absorber lifetime reduction from 40 to 20 ps for multi-section laser diode implementations
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    [16]
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    . These may suggest that the experimentally observed 2,7 times reduction in the mode-locked pulse duration is dominated by a decrease in the saturable absorber recovery time under reverse biasing which should lead to a voltagedependent pulse shortening with a characteristic exponential decay.