The 15 reference contexts in paper A. Esman K., V. Kostenko I., N. Mukhurov I., G. Zykov L., V. Potachits A., А. Есман К., В. Костенко И., Н. Мухуров И., Г. Зыков Л., В. Потачиц А. (2016) “ВЫСОКОЭФФЕКТИВНЫЙ ПРИЕМНИК ИНФРАКРАСНОГО ИЗЛУЧЕНИЯ // HIGH-EFFICIENCY INFRARED RECEIVER” / spz:neicon:pimi:y:2016:i:2:p:129-135

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    DOI: 10.21122/2220-9506-2016-7-2-129-135 Introduction In recent years, special attention is given to research on the development and production of highperformance solid-state receivers of the infrared electromagnetic radiation. These receivers are based on the low-barrier Schottky diodes, which have virtually no competition in the uncooled microwave receivers
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    . This range of electromagnetic waves has attracted the attention of researchers both from theoretical and practical purposes due to its relevance in various fields of science and technology. The whole Planet Earth and all things therein, even the ice, emit the electromagnetic radiation located namely in this range [3, 4].
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    This range of electromagnetic waves has attracted the attention of researchers both from theoretical and practical purposes due to its relevance in various fields of science and technology. The whole Planet Earth and all things therein, even the ice, emit the electromagnetic radiation located namely in this range
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    . The need to develop and produce the compact, inexpensive and reliable infrared facilities primarily relate to the expansion and deepening of space research. In the space it is almost ideal conditions for the propagation of infrared radiation, as there are no absorbing and scattering media.
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    The practical relevance of the devices, that are based on these receivers, not only in the space industry, but also in biomedical applications, life safety systems, non-destructive testing systems, diagnostic systems of cancer diseases and many other areas
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    . The approach to the design of the receivers on the basis of δ-doped low-barrier zero-bias Schottky diodes, which have beam leads [9, 10] and embed into the planar log-periodic and spiral (broadband) or dipole and slot antenna [11], is the most successful developed in this direction.
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    practical relevance of the devices, that are based on these receivers, not only in the space industry, but also in biomedical applications, life safety systems, non-destructive testing systems, diagnostic systems of cancer diseases and many other areas [5–8]. The approach to the design of the receivers on the basis of δ-doped low-barrier zero-bias Schottky diodes, which have beam leads
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    and embed into the planar log-periodic and spiral (broadband) or dipole and slot antenna [11], is the most successful developed in this direction. Upward frequency expansion of the operating band is difficult due to a number of significant limitations.
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    The approach to the design of the receivers on the basis of δ-doped low-barrier zero-bias Schottky diodes, which have beam leads [9, 10] and embed into the planar log-periodic and spiral (broadband) or dipole and slot antenna
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    , is the most successful developed in this direction. Upward frequency expansion of the operating band is difficult due to a number of significant limitations. The limit frequency of detection is determined on the one hand by the loss resistance and junction capacitance and on the other hand by the quality of the plates of the raw material, and the state of the
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    determined on the one hand by the loss resistance and junction capacitance and on the other hand by the quality of the plates of the raw material, and the state of the art of technology and parasitic parameters depending on its design. Reducing the serial loss resistance by increasing the semiconductor doping is limited by achieved value of the dopant concentration
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    . Junction capacitance of the zerobias diode with an active region square of several square microns is currently equal to several fF. One of the main parasitic parameters is stray capacitance of the diode, which is determined by the permittivity and the structure of the elastic dielectric disposed between the cathode and anode beam leads as well as their size and relative position.
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    One of the main parasitic parameters is stray capacitance of the diode, which is determined by the permittivity and the structure of the elastic dielectric disposed between the cathode and anode beam leads as well as their size and relative position. However, the low efficiency of such receivers at room temperature prevents their wide use in practice
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    , because when the widths of the contact and diode are equal to the microns fraction the edge effects have a considerable influence on the currentvoltage characteristics of a semiconductor junction, and the reduction of the width of the conducting lines, leaded to the contacts, related to the technical problems [16].
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    at room temperature prevents their wide use in practice [13–15], because when the widths of the contact and diode are equal to the microns fraction the edge effects have a considerable influence on the currentvoltage characteristics of a semiconductor junction, and the reduction of the width of the conducting lines, leaded to the contacts, related to the technical problems
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    . The purpose of this work is to improve the main parameters and characteristics of the integrated receiver of mid-infrared electromagnetic radiation at the operating room temperature by modifying the electrodes configuration of the diode and optimizing the distance between them.
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    This method is based on the configuration modification of the inner parts of the metal electrodes, whose dimensions are less than the wavelength of the received electromagnetic radiation. Known integral receiver
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    typically (Figure 1) comprises a substrate 1, on which n+-layer 2, n-layer 3 and dielectric layer 4 with the cutout 13 sequentially deposited, and also includes a cathode 7 and anode 8 electrodes with the respective cathode (ohmic) 5 and anode (rectifying) 6 contacts in the layers 2 and 3.
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    Computer experiment Simulation of the electromagnetic characteristics of the proposed receiver was carried out in High Frequency Structure Simulator (HFSS) software package, which is the industry standard of the threedimensional solutions of the applications
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    . This software has a high accuracy, calculating speed and usability. Using advanced algorithms based on the finite element, integral equation and hybrid computational methods are implemented to calculate the behavior of 3D electromagnetic fields on the arbitrary geometry with predefined properties of materials.
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    At that, the rounded radius of the inner part of the cathode electrode Rc = 318 nm (Rc = Ra + l). The dependences of the reflection losses and SWR of the integrated receiver for the first (curves 1) and second (curves 2) cases and the case given in
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    (curves 3) for the same range of wavelengths of the electromagnetic radiation are shown in Figures 5 and 6. Figure 5 – The dependences of the reflection losses of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the wavelength for the first (curve 1) and second (curve 2) cases and the case given in [17] (curve 3) Figure 6 – The dependences
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    Figure 5 – The dependences of the reflection losses of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the wavelength for the first (curve 1) and second (curve 2) cases and the case given in
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    (curve 3) Figure 6 – The dependences of the ratio standing wave of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the wavelength for the first (curve 1) and second (curve 2) cases and the case given in [17] (curve 3) According to the carried out calculations, the minimum reflection losses are equal –26.99, –57.75 and –44.
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    resonance nano- and microstructures on the wavelength for the first (curve 1) and second (curve 2) cases and the case given in [17] (curve 3) Figure 6 – The dependences of the ratio standing wave of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the wavelength for the first (curve 1) and second (curve 2) cases and the case given in
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    (curve 3) According to the carried out calculations, the minimum reflection losses are equal –26.99, –57.75 and –44.15 dB (curves 1, 2 and 3, Figure 5), respectively, at wavelengths of 5.93, 6.09 and 6.26 μm.
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    Figure 7 – Directivity pattern of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the azimuthal angle at the elevation angle θ = 180 degrees for the first (curve 1) and second (curve 2) cases and the case given in
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    (curve 3) Figure 8 – Directivity pattern of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the elevation angle at the azimuthal angle φ = 90 degrees for the first (curve 1) and second (curve 2) cases and the case calculated for [17] (curve 3) Conclusion By numerical methods we studied the effect of the electrodes configurati
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    angle θ = 180 degrees for the first (curve 1) and second (curve 2) cases and the case given in [17] (curve 3) Figure 8 – Directivity pattern of the mid-infrared electromagnetic radiation receiver with the resonance nano- and microstructures on the elevation angle at the azimuthal angle φ = 90 degrees for the first (curve 1) and second (curve 2) cases and the case calculated for
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    (curve 3) Conclusion By numerical methods we studied the effect of the electrodes configuration and the distance between them in the low-barrier Schottky diodes on the main parameters and characteristics that determine practical suitability of receivers of midinfrared electromagnetic radiation.
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