The 66 references in paper A. Borzdov V., V. Borzdov M., N. Dorozhkin N., А. Борздов В., В. Борздов М., Н. Дорожкин Н. (2016) “ЧИСЛЕННОЕ МОДЕЛИРОВАНИЕ ЭЛЕКТРИЧЕСКИХ ХАРАКТЕРИСТИК ГЛУБОКОСУБМИКРОННОГО МОП-ТРАНЗИСТОРА СО СТРУКТУРОЙ «КРЕМНИЙ НА ИЗОЛЯТОРЕ» // NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR” / spz:neicon:pimi:y:2016:i:2:p:161-168

1
O. Kononchuk and B. -Y. Nguyen Silicon-on-insulator (SOI) Technology. Manufacture and Applications / eds., Woodhead Publishing, Sawston, Cambridge, UK,
(check this in PDF content)
2
14, 474 p. 2. Sakurai T., Matsuzawa A., Douseki T. Fully-Depleted SOI CMOS Circuits and Technology for UltralowPower Applications, Springer, Dordrecht, The Netherlands, 2006, 411 p.
(check this in PDF content)
3
Celler G.K., Cristoloveanu S. Frontiers of siliconon-insulator. Journal of Applied Physics, 2003, vol. 93, no. 9, pp. 4955–4978.
(check this in PDF content)
4
Xin’an C., Qing’an H. A novel SOI MOSFET electrostatic field sensor. Journal of Semiconductors, 2010, vol. 31, no. 4, pp. 045003-1–045003-4.
(check this in PDF content)
5
Du W., Inokawa H., Satoh H., Ono A. SOI metaloxide-semiconductor field-effect transistor photon detector based on single-hole counting. Optics Letters, 2011, vol. 36, no 15, pp. 2800–2802.
(check this in PDF content)
6
Du W., Inokawa H., Satoh H., Ono A. Singlephoton detection by a simple silicon-on-insulator metaloxide-semiconductor field-effect Transistor. Japanese Journal of Applied Physics, 2012, vol. 51, pp. 06FE011–06FE01-4.
(check this in PDF content)
7
Sampedro C., Gamiz F., Godoy A., JimenezMolinos F. Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices. Journal of Computational Electronics, 2007, no. 6, pp. 41–44.
(check this in PDF content)
8
Rengel R., Martin M.J., Gonzalez T., Mateos J., Pardo D., Dambrine G., Raskin J.-P., Danneville F. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs. IEEE Transactions on Electron Devices, 2006, vol. 53, no. 3, pp. 523–532.
(check this in PDF content)
9
Zhevnyak O., Borzdov V., Borzdov A., Pozdnyakov D., Komarov F. Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs. Proceedings of SPIE, 2008, vol. 7025, pp. 70251L-1–70251L-8.
(check this in PDF content)
10
Gamiz F., Sampedro C., Donetti L., Godoy A. Monte-Carlo simulation of ultra-thin film siliconon-insulator MOSFETs. International Journal of High Speed Electronics and Systems, 2013, vol. 22, no. 1, pp. 1350001-1–1350001-32.
(check this in PDF content)
11
Fischetti M.V., Laux S.E. Monte Carlo analysis of electron transport in small semiconductor devices including band structure and space-charge effects. Physical Review B, 1988, vol. 38, no 14, pp. 9721–9745.
(check this in PDF content)
12
Duncan A., Ravaioli U., Jacumeit J. Fullband Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors. IEEE Transactions on Electron Devices, 1998, vol. 45, no. 4, pp. 867–876.
(check this in PDF content)
13
Buffler F.M., Schenk A., Fichtner W. Efficient Monte Carlo device modeling. IEEE Transactions on Electron Devices, 2000, vol. 47, no. 10, pp. 1891–1897.
(check this in PDF content)
14
Donetti L., Gamiz F., Biel B., Sampedro C. Twoband k·p model for Si-(110) electron devices. Journal of Applied Physics, 2013, vol. 114, pp. 073706-1–073706-7.
(check this in PDF content)
15
Rengel R., Pardo D., Martin M.J. A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications. Semiconductor Science and Technology, 2004, vol. 19, pp. 634–643.
(check this in PDF content)
16
Borzdov A.V., Borzdov V.M., V’yurkov V.V. Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET. Proceedings of SPIE, 2014, vol. 9440, pp. 944013-1–944013-7.
(check this in PDF content)
17
Hockney R.W., Eastwood J.W. Computer simulations using particles, McGraw-Hill, New York, 1981, 640 p.
(check this in PDF content)
18
Jacoboni C., Lugli P. The Monte Carlo method for semiconductor device simulation, Springer, Wien– New York, 1989, 357 p.
(check this in PDF content)
19
Gonzalez T., Pardo D. Physical models of ohmic contact for Monte Carlo device simulation. Solid-State Electronics, 1996, vol. 39, no. 4, pp. 555–562.
(check this in PDF content)
20
Jacoboni C., Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Reviews of Modern Physics, 1983, vol. 55, no. 3, pp. 645–705.
(check this in PDF content)
21
Rodriguez-Bolivar S., Gomez-Campos F.M., Carceller J.E. Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge. Semiconductor Science and Technology, 2005, no. 20, pp. 16–22.
(check this in PDF content)
22
Rodriguez-Bolivar S., Gomez-Campos F.M., Gamiz F., Carceller J.E. Implications of nonparabolicity, warping, and inelastic phonon scattering on hole transport in pure Si and Ge within the effective mass framework. Journal of Applied Physics, 2005, vol. 97, pp. 013702- 1–013702-10.
(check this in PDF content)
23
Gomez-Campos F.M., Rodriguez-Bolivar S., Carceller J.E. An efficient Monte Carlo procedure for studying hole transport in doped semiconductors. Journal of Computational Electronics, 2004, no. 3, pp. 329–332.
(check this in PDF content)
24
Keldysh L.V. Concerning the theory of impact ionization in semiconductors. Soviet Physics JETP, 1965, vol. 21, no. 6, pp. 1135–1144.
(check this in PDF content)
25
Kane E.O. Electron scattering by pair production in silicon. Physical Review, 1967, vol. 159, no. 3, pp. 624–631.
(check this in PDF content)
26
Fischetti M.V., Laux S.E., Crabbe E. Understanding hot-electron transport in semiconductor devices. Journal of Applied Physics, 1995, vol. 78, no. 2, pp. 1058–1087.
(check this in PDF content)
27
Ridley B.K. Soft-threshold lucky drift theory of impact ionization in semiconductors. Semiconductor Science and Technology, 1987, no. 22, pp. 116–122.
(check this in PDF content)
28
Speransky D., Borzdov A., Borzdov V. Impact ionization process in deep submicron MOSFET. International Journal of Microelectronics and Computer Science, 2012, vol. 3, no.1, pp. 21–24.
(check this in PDF content)
29
Borzdov V.M., Borzdov A.V., Speransky D.S., V’yurkov V.V., Orlikovsky A.A. Evaluation of the effective threshold energy of interband impact ionization in a deep-submicron silicon n-channel MOS transistor. Russian Microelectronics, 2014, vol. 43, no. 3, pp 189–193.
(check this in PDF content)
30
Sano N., Aoki T., Tomizawa M., Yoshii A. Electron transport and impact ionization in Si. Physical Review B, 1990, vol. 41, no. 17, pp. 12122–12128.
(check this in PDF content)
31
Sano N., Yoshii A. Impact ionization rate near thresholds in Si. Journal of Applied Physics, 1994, vol. 75, no. 10, pp. 5102–5105.
(check this in PDF content)
32
Kamakura Y., Mizuno H., Yamaji M., Morifuji M., Taniguchi K., Hamaguchi C., Kunikiyo T., Takenaka M. Impact ionization model for full band Monte Carlo simulation. Journal of Applied Physics, 1994, vol. 75, no. 7, pp. 3500–3507.
(check this in PDF content)
33
Kunikiyo T., Takenaka M., Morifuji M., Taniguchi K., Hamaguchi C. A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation. Journal of Applied Physics, 1996, vol. 79, no. 10, pp. 7718–7725.
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