The 12 references in paper Т. Тимофеева Е., В. Тимофеев Б., Д. Николаев В. (2018) “ФОТОДИОД ГРАФЕН-КРЕМНИЙ, ИЗГОТОВЛЕННЫЙ МЕТОДОМ ЛАМИНИРОВАНИЯ, И ЕГО ХАРАКТЕРИСТИКИ” / spz:neicon:nanorf:y:2018:i:4:p:28-31

1
Chen C.C., Aykol M., Chang C.C., et al. Graphene-silicon schottky diodes // Nano Lett. 2011. V. 11. No 5. P. 1863–1867.
(check this in PDF content)
2
An X., Liu F., Jung Y.J., Kar S. Tunable graphene–silicon heterojunctions for ultrasensitive photodetection // Nano Lett. 2013. V. 13. No 3. P. 909–916.
(check this in PDF content)
3
Liu F., Kar S. Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent response in graphene-silicon junctions // ACS Nano. 2014. V. 8. No 10. P. 10270–10279.
(check this in PDF content)
4
Chen Z., Cheng Z., Wang J., Wan X., Shu C., Tsang H.K., Ho H.P., Xu J.-B. High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode // Adv. Optical Mater. 2015. V. 3. No 9. P. 1207–1214
(check this in PDF content)
5
Casalino M., Sirleto L., Iodice M., Rao S., Coppola G. Schottky graphene/silicon photodetectors based on internal photoemission effect // In the proceedings of the 2015 Fotonica AEIT Italian Conference on Photonics Technologies. 2015. P. 4
(check this in PDF content)
6
Riazimehr S., Bablich A., Schneide D., Kataria S., Passi V., Yim C., Duesberg G.S., Lemme M. C. Spectral sensitivity of graphene/silicon heterojunction photodetectors // Solid State Electronics. 2015. V. 115. P. 207–212.
(check this in PDF content)
7
Tang X., Wu G., Zhang H., Wai K., Lai Ch. Tuning graphene/ silicon schottky barrier height by chemical doping // In the proceedings of the 15th IEEE International Conference on Nanotechnology. 2015. P. 1250–1253.
(check this in PDF content)
8
Li X., Zhu M., Du M., Lv Z., Zhang L., Li Y., Yang Y., Yang T., Li X., Wang K., Zhu H., Fang Y. High detectivity graphene-silicon heterojunction photodetector // Small. 2016. V. 12. No 5. P. 595–601.
(check this in PDF content)
9
Luongo G., Giubileo F., Genovese L., Iemmo L., Martuccielloand N., Bartolomeo A. Di. I-V and C-V characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor // Nanomaterials. 2017. V. 7. P. 158.
(check this in PDF content)
10
Wan X., Xu Y., Guo H. A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon? // NPJ 2D Materials and Applications. 2017. V. 4. P. 1–8.
(check this in PDF content)
11
Riazimehr S.; Kataria S.; Bornemann R.; Bolivar H. P., Ruiz F.J.G., Engström O., Godo, A., Lemme M.C. High photocurrent in gated graphene–silicon hybrid photodiodes // ACS Photonics. 2017. V. 4. No 6. P. 1506–1514.
(check this in PDF content)
12
Тимофеев В.Б., Попов В.И., Николаев Д.В., Тимофеева Т.Е., Смагулова С.А. Получение прозрачных проводящих пленок из CVD-графена методом ламинирования и их характеризация // Российские нанотехнологии. 2017. Т.12. No 1–2. С. 49–52.
(check this in PDF content)